Massachusetts Institute of Technology AND Nanyang Technological University
发明人:
申请号：
GB20160019439
公开号：
GB201619439(D0)
申请日:
2015.05.22
申请国别(地区):
英国
年份:
2017
代理人:
摘要：
A method of manufacturing a germanium-on-insulator substrate is disclosed. The method comprises: providing (102) a first semiconductor substrate, and a second semiconductor substrate formed with a germanium layer; bonding (102) the first semiconductor substrate to the second semiconductor substrate using at least one dielectric material to form a combined substrate, the germanium layer being arranged intermediate the first and second semiconductor substrates; removing (104) the second semiconductor substrate from the combined substrate to expose at least a portion of the germanium layer with misfit dislocations; and annealing (106) the combined substrate to enable removal of the misfit dislocations from the portion of the germanium layer.
