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Metallization having high power compatibility and high electrical conductivity
专利权人:
QUALCOMM Incorporated
发明人:
Binninger Charles,Knauer Ulrich,Zottl Helmut,Ruile Werner,Jewula Tomasz,Nuessl Rudolf
申请号:
US201514867759
公开号:
US9728705(B2)
申请日:
2015.09.28
申请国别(地区):
美国
年份:
2017
代理人:
Patterson & Sheridan, L.L.P.
摘要:
A metallization, for carrying current in an electrical component, includes a bottom layer overlying a substrate surface and includes titanium (Ti) or a titanium compound as main constituent. An upper layer overlies the bottom layer and includes copper (Cu) as main constituent. The bottom layer and the upper layer form a base layer. A top layer is in direct contact with the upper layer and includes aluminum (Al) as main constituent. The base layer further includes a middle layer, consisting of silver, that is arranged between the bottom layer and the upper layer.
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