OXIDE SEMICONDUCTOR, SEMICONDUCTOR DEVICE, SEMICONDUCTOR MEMORY DEVICE, AND SOLID-STATE IMAGING DEVICE

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专利权人:

Kabushiki Kaisha Toshiba

发明人:

KANREI Nobuki,MOMOSE Hisayo

申请号：

US201715697725

公开号：

US2018076292(A1)

申请日:

2017.09.07

申请国别(地区):

美国

年份:

2018

代理人:

摘要：

According to one embodiment, an oxide semiconductor includes indium (In), gallium (Ga), and silicon (Si). A composition ratio of Si to In (Si/In) in the oxide semiconductor is larger than 0.2, and a composition ratio of Si to Ga (Si/Ga) in the oxide semiconductor is larger than 0.2.

来源网站：

中国工程科技知识中心

来源网址：

http://www.ckcest.cn/home/