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Movement-free bending method for one-dimensional or two-dimensional nanostructure using ion beam
专利权人:
发明人:
Dal Hyoun Kim,Hwack Joo Lee,Sang Jung Ahn
申请号:
US14125392
公开号:
US08859999B2
申请日:
2012.12.06
申请国别(地区):
US
年份:
2014
代理人:
摘要:
The movement-free bending method means the one of deformation methods for a one- or two-dimensional nanostructures using an ion beam capable of bending and deforming them and furthermore, changing a bending direction without requiring a motion such as a rotation of the nanostructures. The present invention affords a movement-free bending method for deforming the nanostructure 20 having the one-dimensional or two-dimensional shape by irradiating the ion beam 10, wherein a bending direction of the nanostructure 20 is controlled depending on energy of the ion beam 10 or a thickness of the nanostructure 20.
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