SHATALOV, Maxim, S.,SHUR, Michael,DOBRINSKY, Alexander
申请号：
WO2016US29489
公开号：
WO2016176285(A1)
申请日:
2016.04.27
申请国别(地区):
世界知识产权组织国际局
年份:
2016
代理人:
摘要：
A device is provided in which a light emitting semiconductor structure is excited by an electron beam that impacts a region of a lateral surface of the light emitting semiconductor structure at an angle to the normal of the lateral surface that is non-zero. The non-zero angle can be configured to cause excitation in a desired region of the light emitting semiconductor structure. The device can include wave guiding layer(s) and/or other features to improve the light generation and/or operation of the device.
