Silicon carbide crystal and method of manufacturing silicon carbide crystal

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专利权人:

Sumitomo Electric Industries, Ltd.

发明人:

Sasaki Makoto

申请号：

US201615185602

公开号：

US9725823(B2)

申请日:

2016.06.17

申请国别(地区):

美国

年份:

2017

代理人:

Drinker Biddle & Reath LLP

摘要：

An SiC crystal (10) has Fe concentration not higher than 0.1 ppm and Al concentration not higher than 100 ppm. A method of manufacturing an SiC crystal includes the following steps. SiC powders for polishing are prepared as a first source material (17). A first SiC crystal (11) is grown by sublimating the first source material (17) through heating and precipitating an SiC crystal. A second source material (12) is formed by crushing the first SiC crystal (11). A second SiC crystal (14) is grown by sublimating the second source material (12) through heating and precipitating an SiC crystal. Thus, an SiC crystal and a method of manufacturing an SiC crystal capable of achieving suppressed lowering in quality can be obtained.

来源网站：

中国工程科技知识中心

来源网址：

http://www.ckcest.cn/home/