GAS SENSOR WITH FIELD-EFFECT TRANSISTOR

• 收藏
• 分享

专利权人:

ROBERT BOSCH GMBH

发明人:

ANDREAS KLAUS

申请号：

JP20090285217

公开号：

JP2010145402(A)

申请日:

2009.12.16

申请国别(地区):

日本

年份:

2010

代理人:

摘要：

PROBLEM TO BE SOLVED: To provide a gas sensor (1) with a field-effect transistor (FET) for detecting gas or mixture gas in which attachment of a sensitivity layer (10) to the gate area of the sensor can be improved. SOLUTION: In this gas sensor, a porous adhesive (15) for attachment of the gas-sensitive layer (10) is arranged on the gate area (G). COPYRIGHT: (C)2010,JPO&INPIT

来源网站：

中国工程科技知识中心

来源网址：

http://www.ckcest.cn/home/