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Method of measuring thermal electric characteristics of semiconductor device
专利权人:
INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE
发明人:
Wang Chien-Ping,Chen Tzung-Te,Chou Pei-Ting
申请号:
US201213587498
公开号:
US9557368(B2)
申请日:
2012.08.16
申请国别(地区):
美国
年份:
2017
代理人:
Muncy, Geissler, Olds & Lowe, P.C.
摘要:
The present disclosure relates to a method for measuring thermal electric characteristics of a semiconductor device, including the steps of: providing at least one current to the LED device over a time interval; recording a voltage transient response of the LED device, wherein the voltage transient response has a plurality of time segments different in gradient; computing a voltage difference from one of the plurality of time segments in the voltage transient response; and determining whether the LED device is defective based on the voltage difference, wherein the voltage difference is thermal dependent. The present disclosure also provides a testing method for defining a plurality of time segments.
来源网站:
中国工程科技知识中心
来源网址:
http://www.ckcest.cn/home/

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