Methods of forming a memory cell material, and related methods of forming a semiconductor device structure, memory cell materials, and semiconductor device structures

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专利权人:

Micron Technology, Inc.

发明人:

Sandhu Gurtej S.,Smythe John A.

申请号：

US201414259556

公开号：

US9735359(B2)

申请日:

2014.04.23

申请国别(地区):

美国

年份:

2017

代理人:

TraskBritt

摘要：

A method of forming a memory cell material comprises forming a first portion of a dielectric material over a substrate by atomic layer deposition. Discrete conductive particles are formed on the first portion of the dielectric material by atomic layer deposition. A second portion of the dielectric material is formed on and between the discrete conductive particles by atomic layer deposition. A memory cell material, a method of forming a semiconductor device structure, and a semiconductor device structure are also described.

来源网站：

中国工程科技知识中心

来源网址：

http://www.ckcest.cn/home/