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SUBSTRATE PROCESSING METHOD FOR DEPOSITING A BARRIER LAYER TO PREVENT PHOTORESIST POISONING
专利权人:
Lam Research Corporation
发明人:
Cheung David,Kalinovski Ilia
申请号:
US201715628739
公开号:
US2018005819(A1)
申请日:
2017.06.21
申请国别(地区):
美国
年份:
2018
代理人:
摘要:
A method for depositing a barrier layer includes a) arranging a substrate including a nitride layer in a processing chamber; b) setting a process temperature in the processing chamber to a predetermined process temperature range; c) setting a process pressure in the processing chamber to a predetermined process pressure range; d) supplying at least one of a gas and a vapor including an organosilane precursor species; and e) depositing a barrier layer on the nitride layer. The barrier layer reduces diffusion of nitrogen-containing groups in the nitride layer into a photoresist layer that is subsequently deposited on the nitride layer.
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