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Masking methods for ALD processes for electrode-based devices
专利权人:
Ultratech, Inc.
发明人:
Bhatia Ritwik
申请号:
US201615210095
公开号:
US9633850(B2)
申请日:
2016.07.14
申请国别(地区):
美国
年份:
2017
代理人:
Opticus IP Law PLLC
摘要:
Masking methods for atomic-layer-deposition processes for electrode-based devices are disclosed, wherein solder is used as a masking material. The methods include exposing electrical contact members of an electrical device having an active device region and a barrier layer formed by atomic layer deposition. This includes depositing solder elements on the electrical contact members, then forming the barrier layer using atomic layer deposition, wherein the barrier layer covers the active device region and also covers the solder elements that respectively cover the electrical contact members. The solder elements are then melted, which removes respective portions of the barrier layer covering the solder elements. Similar methods are employed for exposing contacts when forming layered capacitors.
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中国工程科技知识中心
来源网址:
http://www.ckcest.cn/home/

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