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Process for producing highly oriented graphene films
专利权人:
Nanotek Instruments, Inc.
发明人:
Zhamu Aruna,Jang Bor Z,Wang Yanbo,Fu Lucy
申请号:
US201413999282
公开号:
US9580325(B2)
申请日:
2014.02.06
申请国别(地区):
美国
年份:
2017
代理人:
摘要:
A process for producing a highly oriented graphene film (HOGF), comprising: (a) preparing a graphene oxide (GO) dispersion having GO sheets dispersed in a fluid medium; (b) dispensing and depositing the dispersion onto a surface of a supporting substrate to form a layer of GO, wherein the dispensing and depositing procedure includes subjecting the dispersion to an orientation-inducing stress; (c) removing the fluid medium to form a dried layer of GO having an inter-plane spacing d002 of 0.4 nm to 1.2 nm; (d) slicing the dried layer of GO into multiple pieces of dried GO and stacking at least two pieces of dried GO to form a mass of multiple pieces of GO; and (f) heat treating the mass under an optional first compressive stress to produce the HOGF at a first heat treatment temperature higher than 100° C. to an extent that an inter-plane spacing d002 is decreased to a value less than 0.4 nm.
来源网站:
中国工程科技知识中心
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