Rohm and Haas Electronic Materials LLC;Dow Global Technologies LLC
发明人:
Sung Jin Wuk,Li Mingqi,Park Jong Keun,Kaitz Joshua A.,Jain Vipul,Wu Chunyi,Hustad Phillip D.
申请号：
US201615224503
公开号：
US10133179(B2)
申请日:
2016.07.29
申请国别(地区):
美国
年份:
2018
代理人:
Baskin Jonathan D.
摘要：
A pattern treatment method, comprising: (a) providing a semiconductor substrate comprising a patterned feature on a surface thereof; (b) applying a pattern treatment composition to the patterned feature, wherein the pattern treatment composition comprises: a block copolymer and an organic solvent, wherein the block copolymer comprises: (i) a first block comprising a first unit formed from 4-vinyl-pyridine, and (ii) a second block comprising a first unit formed from a vinyl aromatic monomer; and (c) removing residual pattern shrink composition from the substrate, leaving a coating of the block copolymer over the surface of the patterned feature, thereby providing a reduced pattern spacing as compared with a pattern spacing of the patterned feature prior to coating the pattern treatment composition. The methods find particular applicability in the manufacture of semiconductor devices for providing high resolution patterns.
