ALKYLATED GRAPHENE OXIDE COMPOSITION AND FIELD EFFECT TRANSISTOR TYPE GAS SENSOR COMPRISING THE SAME
- 专利权人:
- 发明人:
- 申请号：
- KR20130118638
- 公开号：
- KR20150040076(A)
- 申请日:
- 2013.10.04
- 申请国别(地区):
- 韩国
- 年份:
- 2015
- 代理人:
- 摘要：
Provided is an alkylated-graphene oxide composition including an organic semiconductor and alkylated-graphene oxide. The alkylated-graphene oxide composition can be used as an active layer of a field effect transistor type gas sensor, that is, as a sensing layer. Accordingly, the present invention can reduce process costs by using the organic semiconductor and can be applied to a flexible substrate as well as capable of being operated at room temperature. In addition, the present invention can omit a process which additionally forms a receptor layer by forming the active layer with the alkylated-graphene oxide, which is a receptor material, and a complex body where a polymeric semiconductor is dispersed. Moreover, the present invention can improve sensitivity of the sensor since a receptor exists in a channel area of a transistor element.
- 来源网站：
- 中国工程科技知识中心
