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Pressure control method for process chamber and pressure control device for process chamber
专利权人:
PROGRESSIO LLC
发明人:
Vyers Emmanuel,Kimura Mie
申请号:
US201414547752
公开号:
US9880569(B2)
申请日:
2014.11.19
申请国别(地区):
美国
年份:
2018
代理人:
Pearne & Gordon LLP
摘要:
A predicted outflow rate (Qo) at which gas is discharged from a process chamber 2 via a vacuum pump 3 is computed, and an input flow rate (Qi) is calculated in order to reach a preset target pressure (Psp). The input flow rate (Qi) is calculated, on the basis of the expression Qi=Qo+(ΔP/Δt)V, from a known volume (V) of the process chamber 2 and a pressure change rate (ΔP/Δt) obtained from the current pressure (P1) within the process chamber 2 to reach the target pressure (Psp). A current predicted outflow rate (Qo) is estimated on the basis of the expression Qo(n)=P2*f1(P2), from the current pressure (P2) within the vacuum pump 3 and a known characteristic pumping rate (Sp=f1(P2)) of the vacuum pump 3 under preset pressure.
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中国工程科技知识中心
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