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Methods and systems for intraventricular brain stimulation
专利权人:
Sherwin Hua
发明人:
Sherwin Hua
申请号:
US15891231
公开号:
US10406351B2
申请日:
2018.02.07
申请国别(地区):
US
年份:
2019
代理人:
摘要:
The present application is directed to devices and methods that can treat dementia or other brain disorders via electrical stimulation. Embodiments disclosed herein utilize brain stimulation of brain areas involved in memory and cognition through an intraventricular approach. Brain stimulation is combined with CSF flow in an intraventricular electrode having one or more passageways to permit fluid to flow therethrough. For example, an intraventricular electrode shunt catheter can be safely placed in any part of the ventricular system and through any foramen or aqueduct of the ventricular system without fear of obstruction to CSF flow.
来源网站:
中国工程科技知识中心
来源网址:
http://www.ckcest.cn/home/

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