The present invention relates to a solid-state imaging device and the like having a structure for capturing a high-resolution image even when any of the reading-out wiring and row selecting wiring is disconnected. The solid-state imaging device (1) comprises a photodetecting section (10) having M×N pixel portions P 1,1 to P M,N two-dimensionally arranged in a matrix of M rows and N columns. A pixel portion P m,n of the photodetecting section (10) includes a photodiode PD generating charge of an amount according to an incident light intensity and a reading-out switch SW 1 connected to the photodiode PD. The pixel portion P m,n occupies a substantially square region, and most of the region is a region of the photodiode PD. A field-effect transistor serving as the reading-out switch SW 1 is formed in one corner of the region. A channel stopper CS is continuously formed in a region sandwiched by pixel portions. In a region surrounded by any 2×2 pixel portions adjacent to one another, a dummy photodiode PD1 surrounded by the channel stopper CS is formed.本發明係關於一種固體攝像裝置等,係具備即使任一條讀出用布線或列選擇用布線斷線之情形下亦可用以獲得較高解像度之圖像之結構。該固體攝像裝置(1)係具備受光部(10),該受光部(10)係具有二維配置成M列N行之矩陣狀之M×N個像素部P1,1~PM,N。受光部(10)之像素部Pm,n係包含:產生與入射光強度對應之量之電荷之光二極體PD;及與此光二極體PD連接之讀出用開關SW1。像素部Pm,n係佔據大略正方形之區域,而該區域之絕大部分均為光二極體PD之區域。在該區域之一個角部,形成有作為讀出用開關SW1之場效電晶體。在由像素部所包夾之區域,係連續形成有通道停止器CS。在藉由彼此鄰接之任意之2×2個像素部所包圍之區域,係形成有由通道停止器CS所包圍之虛擬(dummy)用光二極體PD1。CS...通道停止器Pm,n...屬於第m列之n個像素部Pm,n+1...屬於第m列之n+1個像素部Pm,n-1...屬於第m列之n-1個像素部Pm+1,n...屬於第m+1列之n個像素部Pm-1,n...屬於第m-1列之n個像素部Pm-1,n+1...屬於第m-1列之n+1個像素部Pm-1,n-1...屬於第m-1列之n-1個像素部Pm+1,n+1...屬於第m+1列之n+1個像素部PD...光二極體PD1...虛擬用光二極體SW1...讀出用開關
