Semiconductor Device with Superjunction Structure and Transistor Cells in a Transition Region Along a Transistor Cell Region

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专利权人:

Infineon Technologies Austria AG

发明人:

Hirler Franz,Gamerith Stefan

申请号：

US201715418300

公开号：

US2017221989(A1)

申请日:

2017.01.27

申请国别(地区):

美国

年份:

2017

代理人:

摘要：

A semiconductor device includes a transistor cell region and a transition region. The transistor cell region includes a first portion of a super junction structure and a first contact structure electrically connecting a first load electrode with first source zones of transistor cells. The first source zones are formed on opposite sides of the first contact structure. The transition region directly adjoins to the transistor cell region and includes a second portion of the super junction structure and a second contact structure electrically connecting the first load electrode with a second source zone. The second source zone is formed only at a side of the second contact structure oriented to the transistor cell region.

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中国工程科技知识中心

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