Park, Kyung-Bae,Ryu, Myung-Kwan,Seon, Jong-Baek,Lee, Sang-Yoon,Koo, Bon-Won
申请号：
EP20110159215
公开号：
EP2369627(B1)
申请日:
2011.03.22
申请国别(地区):
欧洲专利局
年份:
2017
代理人:
摘要：
Thin film transistors including a gate electrode, a semiconductor channel disposed between a drain electrode and a source electrode; and a gate insulating layer disposed between the gate electrode and the semiconductor channel , the semiconductor channel including a first metal oxide and the gate insulating layer including a second metal oxide, and at least one metal of the second metal oxide being the same as at least one metal of the first metal oxide, methods of manufacturing thin film transistors, and semiconductor device including thin film transistors.
