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TRANSMISSION ELECTRON MICROSCOPE DEVICE AND TRANSMITTED ELECTRON EXAMINATION DEVICE AND EXAMINATION METHOD
专利权人:
HITACHI LTD
发明人:
NAKAMURA KUNIYASU,KAKIBAYASHI HIROSHI
申请号:
JP19990043235
公开号:
JP2000243338(A)
申请日:
1999.02.22
申请国别(地区):
日本
年份:
2000
代理人:
摘要:
PROBLEM TO BE SOLVED: To provide a transmission electron microscope device for automatically detecting a crystal defect and shape abnormality in a sample at a high speed with a high probability in a wide area of the sample and an examination method using this. SOLUTION: In a transmission electron microscope device composed of an electron beam source, a first stage electrostatic lens 12a, a second stage electrostatic lens 12b, a third stage electrostatic lens 12c, a first stage convergent lens 13a, a second stage convergent lens 13b, an objective front magnetic field lens 4, a deflection coil 14, a first stage projection lens 8, a second stage projection lens 9, a third stage projection lens 10, a first stage shift coil 15a, a second stage shift coil 15b and an image pickup device 11, the electron beam incident direction is plurality changed by the deflection coil 14 to observe the same place. Thus, a detection rate of a crystal defect becomes a high rate. The deflection ratios of the deflection coil 14, the first stage shift coil 15a and the second stage shift coil 15b are linked to correct image offset by the plural electron beam incident directions on the image pickup device 11.
来源网站:
中国工程科技知识中心
来源网址:
http://www.ckcest.cn/home/

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