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Data read method for flash memory
专利权人:
SILICON MOTION, INC.
发明人:
Huang Chien-Ting
申请号:
US201113075053
公开号:
US9570162(B2)
申请日:
2011.03.29
申请国别(地区):
美国
年份:
2017
代理人:
McClure, Qualey & Rodack, LLP
摘要:
The invention provides a data read method. In one embodiment, a flash memory comprises a plurality of pages, and predetermined information is written into each of the pages of the flash memory. First, a target address of the flash memory is read according to a source read voltage to obtain source data and a source error correction code. When error bits of the source data cannot be corrected according to the source error correction code, the predetermined information corresponding to the source data is read from the flash memory according to the source read voltage to obtain correction information. The source data and the source error correction code are then amended according to the difference between the predetermined information and the correction information to obtain an amended data and an amended error correction code. Error bits of the amended data are then corrected according to the amended error correction code.
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中国工程科技知识中心
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http://www.ckcest.cn/home/

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