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複合集束イオンビーム装置及びそれを用いた試料加工方法
专利权人:
株式会社日立ハイテクサイエンス
发明人:
皆藤 孝,田代 純一,杉山 安彦,岩崎 浩二,藤井 利昭,相田 和男,小川 貴志
申请号:
JP20150133559
公开号:
JP6118846(B2)
申请日:
2015.07.02
申请国别(地区):
日本
年份:
2017
代理人:
摘要:
A composite focused ion beam device has a sample stage for supporting a sample, a first ion beam irradiation system that irradiates a first ion beam for processing the sample, and a second ion beam irradiation system that irradiates a second ion beam for processing or observing the sample. The first ion beam irradiation system has a liquid metal ion source that generates first ions for forming the first ion beam. The second ion beam irradiation system has a gas field ion source that generates second ions for forming the second ion beam. The first ion beam irradiated by the first ion beam irradiation system has a first beam diameter and the second ion beam irradiated by the second ion beam irradiation system has a second beam diameter smaller than the first beam diameter. The first and second ion beam irradiation systems are disposed relative to the sample stage so that axes of the first and second ion beams are orthogonal to a tilt axis of the sample stage.
来源网站:
中国工程科技知识中心
来源网址:
http://www.ckcest.cn/home/

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