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Metrology method and apparatus, substrate, lithographic system and device manufacturing method
专利权人:
ASML Netherlands B.V.
发明人:
Smilde Hendrik Jan Hidde,Fagginger Auer Bastiaan Onne,Harutyunyan Davit,Warnaar Patrick
申请号:
US201415115229
公开号:
US10162271(B2)
申请日:
2014.12.30
申请国别(地区):
美国
年份:
2018
代理人:
Pillsbury winthrop Shaw Pittman LLP
摘要:
In a dark-field metrology method using a small target, a characteristic of an image of the target, obtained using a single diffraction order, is determined by fitting a combination fit function to the measured image. The combination fit function includes terms selected to represent aspects of the physical sensor and the target. Some coefficients of the combination fit function are determined based on parameters of the measurement process and/or target. In an embodiment the combination fit function includes jinc functions representing the point spread function of a pupil stop in the imaging system.
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