PROBLEM TO BE SOLVED: To provide a manufacturing method capable of securing electric reliability of an electronic device using through wiring.SOLUTION: There is provided a method of manufacturing an electronic device having an element part, through wiring, and a wiring part on a semiconductor substrate 1. A non-through via hole 2 is formed on a first surface 1a of a substrate, and a first insulation film 3 is formed on an inner wall of the via hole； and an opening 4 which reaches the first insulation film on a bottom surface of the via hole is formed on the side of a second surface 1b of the substrate, and a second insulation film 5 is formed on a bottom surface of the opening. Through wiring 6 is formed in the via hole, and an element part 7 which electrically connects with the through wiring is formed； and the substrate is made thin from a second surface side to be in level with the second insulation film 5 on the bottom surface of the opening 4, and a wiring part 12 which electrically connects with the through wiring is formed on the second insulation film.SELECTED DRAWING: Figure 1【課題】貫通配線を用いる電子デバイスの電気的信頼性を確保することができる作製方法などを提供する。【解決手段】半導体基板１に素子部、貫通配線及び配線部を有する電子デバイスを作製する方法である。基板の第１面１ａ上に非貫通ビアホール２を形成し、ビアホールの内壁に第１絶縁膜３を形成し、基板の第２面１ｂ側より、ビアホールの底面の第１絶縁膜に達する開口４を形成し、開口の底面に第２絶縁膜５を形成する。ビアホールの内部に貫通配線６を形成し、貫通配線と電気的に接続する素子部７を形成し、第２面側より、開口４の底面の第２絶縁膜５と同じ高さになるまで基板を薄板化し、第２絶縁膜上に貫通配線と電気的に接続する配線部１２を形成する。【選択図】図１
