PROBLEM TO BE SOLVED: To provide a manufacturing method capable of securing electric reliability of an electronic device using through wiring.SOLUTION: There is provided a method of manufacturing an electronic device having an element part, through wiring, and a wiring part on a semiconductor substrate 1. A non-through via hole 2 is formed on a first surface 1a of a substrate, and a first insulation film 3 is formed on an inner wall of the via hole; and an opening 4 which reaches the first insulation film on a bottom surface of the via hole is formed on the side of a second surface 1b of the substrate, and a second insulation film 5 is formed on a bottom surface of the opening. Through wiring 6 is formed in the via hole, and an element part 7 which electrically connects with the through wiring is formed; and the substrate is made thin from a second surface side to be in level with the second insulation film 5 on the bottom surface of the opening 4, and a wiring part 12 which electrically connects with the through wiring is formed on the second insulation film.SELECTED DRAWING: Figure 1【課題】貫通配線を用いる電子デバイスの電気的信頼性を確保することができる作製方法などを提供する。【解決手段】半導体基板1に素子部、貫通配線及び配線部を有する電子デバイスを作製する方法である。基板の第1面1a上に非貫通ビアホール2を形成し、ビアホールの内壁に第1絶縁膜3を形成し、基板の第2面1b側より、ビアホールの底面の第1絶縁膜に達する開口4を形成し、開口の底面に第2絶縁膜5を形成する。ビアホールの内部に貫通配線6を形成し、貫通配線と電気的に接続する素子部7を形成し、第2面側より、開口4の底面の第2絶縁膜5と同じ高さになるまで基板を薄板化し、第2絶縁膜上に貫通配線と電気的に接続する配線部12を形成する。【選択図】図1