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SPIN VALVE MAGNETORESISTANCE ELEMENT WITH IMPROVED RESPONSE TO MAGNETIC FIELDS
专利权人:
ALLEGRO MICROSYSTEMS, LLC;COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
发明人:
FERMON, Claude,CAMPIGLIO, Paolo,CADUGAN, Bryan
申请号:
WO2016US34237
公开号:
WO2016196157(A1)
申请日:
2016.05.26
申请国别(地区):
世界知识产权组织国际局
年份:
2016
代理人:
摘要:
A spin valve magnetoresistance element has an even number of free layer structures having ferromagnetic or antiferromagentic coupling with respecto to associated pinning layers via non-magnetic spacers. It may have a configuration in which one half of the free layer structures has an antiferromagnetic coupling and the other half has a ferromagnetic coupling with respect to associated pinned layers. The different couplings are the result of an even number different spacer layers having respective different thicknesses.
来源网站:
中国工程科技知识中心
来源网址:
http://www.ckcest.cn/home/

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