There is provided a method of using an electron microscope (10) to image atomic level defects associated with interfaces between different materials. The impact energy of an electron beam (20) incident on a sample (12) is selected based on the expected potential energy at an interface between at least two materials, a back- scattered electron image simulated and the electron energy iteratively adjusted by a bias voltage (44) applied to the sample until a plane of origin of defects within the sample is reached.
