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MULTIPLEXING DETECTION SYSTEM OF DUAL GATE ION-SENSITIVE FIELD-EFFECT TRANSISTOR SENSOR
专利权人:
KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY
发明人:
LEE Kwan Hyi,LEE Seok,JEUN Minhong,LEE Inkyu,PARK Jung Hoon,CHO Won-Ju,JANG Hyun-June
申请号:
US201514925172
公开号:
US2016202208(A1)
申请日:
2015.10.28
申请国别(地区):
美国
年份:
2016
代理人:
摘要:
A multiplexing detection system of a dual gate ion-sensitive field effect transistor bio sensor of the present invention includes: a first dual gate ion-sensitive field effect transistor bio sensor; and a second dual gate ion-sensitive field effect transistor bio sensor, wherein a first bio signal is sensed through the first dual gate ion-sensitive field effect transistor bio sensor, and a second bio signal is sensed through the second dual gate ion-sensitive field effect transistor bio sensor, and the first bio signal and the second bio signal are different in type from each other.
来源网站:
中国工程科技知识中心
来源网址:
http://www.ckcest.cn/home/

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