REED David A.,Schueler Bruno W.,Newcome Bruce H.,Smedt Rodney,Bevis Chris
申请号：
US201816039292
公开号：
US2018330935(A1)
申请日:
2018.07.18
申请国别(地区):
美国
年份:
2018
代理人:
摘要：
Systems and approaches for semiconductor metrology and surface analysis using Secondary Ion Mass Spectrometry (SIMS) are disclosed. In an example, a secondary ion mass, spectrometry (SIMS) system includes a sample stage. A primary ion beam is directed to the sample stage. An extraction lens is directed at the sample stage. The extraction lens is configured to provide a low extraction field for secondary ions emitted from a sample on the sample stage. A magnetic sector spectrograph is coupled to the extraction lens along an optical path of the SIMS system. The magnetic sector spectrograph includes an electrostatic analyzer (ESA) coupled to a magnetic sector analyzer (MSA).
