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Electric Circuit Including a Semiconductor Device with a First Transistor, a Second Transistor and a Control Circuit
专利权人:
Infineon Technologies AG
发明人:
Sander Rainald,Schloesser Till
申请号:
US201715418491
公开号:
US2017221885(A1)
申请日:
2017.01.27
申请国别(地区):
美国
年份:
2017
代理人:
摘要:
An electric circuit includes a semiconductor device. The semiconductor device includes a first transistor and a second transistor in a common semiconductor substrate. The first transistor is of the same conductivity type as the second transistor. A first source region of the first transistor is electrically connected to a first source terminal via a first main surface of the semiconductor substrate. A second drain region of the second transistor is electrically connected to a second drain terminal via a first main surface of the semiconductor substrate. A first drain region of the first transistor and a second source region of the second transistor are electrically connected to an output terminal via a second main surface of the semiconductor substrate. The electric circuit further includes a control circuit operable to control a first gate electrode of the first transistor and a second gate electrode of the second transistor.
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