Huesken Holger,Pfirsch Frank Dieter,Schulze Hans-Joachim
申请号：
US201414260490
公开号：
US9490354(B2)
申请日:
2014.04.24
申请国别(地区):
美国
年份:
2016
代理人:
Murphy, Bilak & Homiller, PLLC
摘要：
A semiconductor body of an IGBT includes: a first base region of a second conductivity type; a source region of a first conductivity type different from the second conductivity type and forming a first pn-junction with the first base region; a drift region of the first conductivity type and forming a second pn-junction with the first base region; a collector region of the second conductivity type; at least one trench filled with a gate electrode and having a first trench portion of a first width and a second trench portion of a second width, the second width being different from the first width; and a field stop region having the first conductivity type and located between the drift region and the collector region. The field stop region includes a plurality of buried regions having the second conductivity type.
