In this production method for metal lattice: a recessed section having an insulated layer formed on the inside surface thereof is formed on a silicon substrate, and then the section of the insulated layer formed in the bottom section of the recessed section is removed the silicon substrate in the bottom section of the recessed section is further etched the surface area of the bottom section of the recessed section becomes larger than before the etching and the recessed section is filled with metal by means of electroforming. As a result, this kind of production method for metal lattice is capable of using the silicon substrate and more minutely forming the metal section of the lattice by means of electroforming. Also provided are a metal lattice produced by means of this kind of metal lattice production method and an X-ray imaging device using this metal lattice. In addition, an intermediate product for the metal lattice is provided that is capable of producing a metal lattice comprising a metal section formed more minutely and having a substantially uniform growth length and a high aspect ratio, by filling the recessed section with metal by means of electroforming.Linvention porte sur un procédé de fabrication dune grille métallique qui comprend : une section en retrait ayant une couche isolée formée sur la surface intérieure de celle-ci est formée sur un substrat de silicium, puis la section de la couche isolée formée dans la section inférieure de la section en retrait est retirée le substrat de silicium dans la section inférieure de la section en retrait est en outre gravée la surface active de la section inférieure de la section en retrait devient plus grande quavant la gravure et la section en retrait est remplie par un métal au moyen délectroformage. En conséquence, ce type de procédé de fabrication pour une grille métallique est apte à utiliser le substrat de silicium et de former de façon plus minutieuse la section métallique de la grille au moyen dun éle
