Taiwan Semiconductor Manufacturing Company Limited
发明人:
Colinge Jean-Pierre,Diaz Carlos H.
申请号：
US201514852679
公开号：
US9570579(B2)
申请日:
2015.09.14
申请国别(地区):
美国
年份:
2017
代理人:
Jones Day
摘要：
Semiconductor devices that each include a channel region and a gate stack are disclosed. The gate stack includes a gate insulator, a pair of spaced apart first metal gate layers, and a second metal gate layer. The gate insulator extends along the length of the channel region. The first metal gate layers have a first workfunction and extend from the gate insulator. The second metal gate layer is disposed between the first metal gate layers, has a second workfunction different from the first workfunction, and extends from the gate insulator. Methods of fabricating the gate stack are also disclosed.
