INTEGRATED CIRCUIT WITH MULTI-THRESHOLD BULK FINFETS

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专利权人:

Tufts University

发明人:

Gaynor Brad D.,Hassoun Soha

申请号：

US201515127175

公开号：

US2017179121(A1)

申请日:

2015.03.17

申请国别(地区):

美国

年份:

2017

代理人:

摘要：

A method for manufacturing a FinFET having a fm that has a fm body includes selecting a desired electrical performance parameter, selecting a base dimension of the fin, identifying a combination of fin-body doping and fin-geometry that causes the FinFET to have the desired electrical performance parameter, doping the fin body according to the identified fin-body doping, and fabricating the fm according to the fin-geometry.

来源网站：

中国工程科技知识中心

来源网址：

http://www.ckcest.cn/home/