An electron beam exposure apparatus (100) which exposes a wafer (W) coated with electron beam resist to an electron beam is provided with: a stage (22) which holds the wafer (W) and is capable of moving; an electron beam optical system (32) for irradiating the wafer (W) with an electron beam; and an aperture member (16) which is disposed on the wafer (W) side, with respect to the optical axis direction, of the electron beam optical system, and which faces the wafer (W) across a predetermined gap, the aperture member having an aperture through which the electron beam from the electron beam optical system (32) passes.
