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Electron beam irradiation method and scanning electron microscope
专利权人:
Hitachi High-Technologies Corporation
发明人:
Yokosuka Toshiyuki,Yamazaki Minoru,Kazumi Hideyuki,Tago Kazutami
申请号:
US201113580288
公开号:
US9640366(B2)
申请日:
2011.02.09
申请国别(地区):
美国
年份:
2017
代理人:
Crowell & Moring LLP
摘要:
The present invention has for its object to provide a charged particle beam irradiation method and a charged particle beam apparatus which can suppress unevenness of electrification even when a plurality of different kinds of materials are contained in a pre-dosing area or degrees of density of patterns inside the pre-dosing area differs with positions.;To accomplish the above object, a charged particle beam irradiation method and a charged particle beam apparatus are provided according to which the pre-dosing area is divided into a plurality of divisional areas and electrifications are deposited to the plural divisional areas by using a beam under different beam irradiation conditions. With the above construction, the electrifications can be deposited to the pre-dosing area on the basis of such an irradiation condition that the differences in electrification at individual positions inside the pre-dosing area can be suppressed and consequently, an influence an electric field has upon the charged particle beam
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