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MULTI-LAYER BACK ELECTRODE FOR A PHOTOVOLTAIC THIN-FILM SOLAR CELL AND USE OF THE SAME FOR PRODUCING THIN-FILM SOLAR CELLS AND MODULES, PHOTOVOLTAIC THIN-FILM SOLAR CELLS AND MODULES CONTAINING THE MULTI-LAYER BACK ELECTRODE, AND METHOD FOR THE PRODUCTION THEREOF
专利权人:
Robert Bosch GmbH
发明人:
Probst, Volker
申请号:
AU20170200544
公开号:
AU2017200544(A1)
申请日:
2017.01.27
申请国别(地区):
澳大利亚
年份:
2017
代理人:
摘要:
The invention relates to a multi-layer back electrode for a photovoltaic thin-film solar cell, comprising, in this order, at least one bulk back 5 electrode layer (4), at least one, in particular ohmic contact layer (8a, 8b), - obtained by applying at least one layer containing or substantially consisting of at least one metal chalcogenide, the metal being selected from molybdenum, tungsten, tantalum, cobalt and/or niobium and the chalcogen being selected from selenium and/or sulfur, by means of 10 physical or chemical vapor deposition using at least one metal chalcogenide source, or - obtained by applying at least one metal layer (first layer, 10), wherein the first layer and the bulk back electrode layer, in their composition of one or more metals with respect to one or all of these metals, do not match (Mo, W, Ta, Nb and/or Co) and a metal 15 chalcogenide layer (second layer, 12). The invention also relates to the use of this multi-layer back electrode for producing thin-film solar cells and thin-film sola
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