Systems and methods for test circuitry for insulated-gate bipolar transistors

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专利权人:

NXP USA, INC.

发明人:

Sicard Thierry

申请号：

US201414341269

公开号：

US9588170(B2)

申请日:

2014.07.25

申请国别(地区):

美国

年份:

2017

代理人:

摘要：

A saturation edge detection circuit for testing a saturation level in an insulated gate bipolar transistor (“IGBT”) includes a first input operable to receive an on signal, a second input coupled to an IGBT driver circuit, and an output coupled to a control electrode of the IGBT. The output indicates a change in a state of a saturation voltage associated with the IGBT during operation of the IGBT.

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