The Regents of the University of California;Japan Science and Technology Agency
发明人:
HASHIMOTO, Tadao
申请号：
EP20070852946
公开号：
EP2092093(A4)
申请日:
2007.10.25
申请国别(地区):
欧洲专利局
年份:
2017
代理人:
摘要：
A method of growing group III-nitride crystals in a mixture of supercritical ammonia and nitrogen, and the group-III crystals grown by this method. The group III-nitride crystal is grown in a reaction vessel in supercritical ammonia using a source material or nutrient that is polycrystalline group III-nitride, amorphous group III-nitride, group-III metal or a mixture of the above, and a seed crystal that is a group-III nitride single crystal. In order to grow high-quality group III-nitride crystals, the crystallization temperature is set at 550° C. or higher. Theoretical calculations show that dissociation of NH3 at this temperature is significant. However, the dissociation of NH3 is avoided by adding extra N2 pressure after filling the reaction vessel with NH3.
