SINGLE-CRYSTAL SILICON CARBIDE SUBSTRATE, METHOD FOR PRODUCING SINGLE-CRYSTAL SILICON CARBIDE SUBSTRATE, AND METHOD FOR INSPECTING SINGLE-CRYSTAL SILICON CARBIDE SUBSTRATE

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专利权人:

HITACHI METALS, LTD.

发明人:

HIROOKA Taisuke,OKUDA Hiroyuki

申请号：

US201615006423

公开号：

US2016218003(A1)

申请日:

2016.01.26

申请国别(地区):

美国

年份:

2016

代理人:

摘要：

A single-crystal silicon carbide substrate has a main surface having a surface roughness fulfilling Ra ≦1 nm, and has a ratio of hidden scratches of less than 50%, where, in the case where the main surface is arbitrary observed at 50 or more observation points with a field of view having a diameter of 100 μm, the ratio of hidden scratches is defined by a value obtained by dividing the number of the observation points at which a striped hidden scratch having a length of at least 50 μm by the total number of the observation points.

来源网站：

中国工程科技知识中心

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http://www.ckcest.cn/home/