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Preservation of fine pitch redistribution lines
专利权人:
Intel Corporation
发明人:
Lee Kevin J.,Kothari Hiten,Lytle Wayne M.
申请号:
US201314778667
公开号:
US9721886(B2)
申请日:
2013.06.28
申请国别(地区):
美国
年份:
2017
代理人:
Trop, Pruner & Hu, P.C.
摘要:
An embodiment includes a semiconductor apparatus comprising: a redistribution layer (RDL) including a patterned RDL line having two RDL sidewalls, the RDL comprising a material selected from the group comprising Cu and Au; protective sidewalls directly contacting the two RDL sidewalls; a seed layer including the material; and a barrier layer; wherein (a) the RDL line has a RDL line width orthogonal to and extending between the two RDL sidewalls, and (b) the seed and barrier layers each include a width parallel to and wider than the RDL line width. Other embodiments are described herein.
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