KIM, Seiyon,KAVALIEROS, Jack T.,MURTHY, Anand S.,GLASS, Glenn A.,JAMBUNATHAN, Karthik
申请号：
WO2015US38193
公开号：
WO2017003410(A1)
申请日:
2015.06.27
申请国别(地区):
世界知识产权组织国际局
年份:
2017
代理人:
摘要：
A method including forming a fin of a nonplanar device on a substrate, the fin including a second layer between a first layer and a third layer; replacing the second layer with a dielectric material; and forming a gate stack on a channel region of the fin. An apparatus including a first multigate device on a substrate including a fin including a conducting layer on a dielectric layer, a gate stack disposed on the conducting layer in a channel region of the fin, and a source and a drain formed in the fin, and a second multigate device on the substrate including a fin including a first conducting layer and a second conducting layer separated by a dielectric layer, a gate stack disposed the first conducting layer and the second conducting layer in a channel region of the fin, and a source and a drain formed in the fin.
