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MONOLITHIC MICROWAVE INTEGRATED CIRCUIT
专利权人:
Kabushiki Kaisha Toshiba
发明人:
NG Choon Yong
申请号:
US201615058315
公开号:
US2016307856(A1)
申请日:
2016.03.02
申请国别(地区):
美国
年份:
2016
代理人:
摘要:
A monolithic microwave integrated circuit included a substrate, a first pad, a first line, a second line, a second pad, a third pad, a first active element, a second active element. The first line includes an input end connected to the first pad. The second line includes an input end connected to the first pad. The second and third pads are connected to the ground. The first active element includes a first gate electrode connected to the output end of the first line. The second active element includes a second gate electrode connected to the output end of the second line. The first pad is provided between the second pad and a third pad. Electrical length of the first line is equal to electrical length of the second line.
来源网站:
中国工程科技知识中心
来源网址:
http://www.ckcest.cn/home/

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