ORGANIC FIELD-EFFECT TRANSISTOR TYPE GAS SENSOR AND USAGE THEREOF

• 收藏
• 分享

专利权人:

TOYOTA CENTRAL R&D LABS INC

发明人:

申请号：

JP20110068171

公开号：

JP2012202848(A)

申请日:

2011.03.25

申请国别(地区):

日本

年份:

2012

代理人:

摘要：

PROBLEM TO BE SOLVED: To provide an organic field-effect transistor type gas sensor which can achieve both the excellent detection sensitivity of gas and the desorption of gas; and a usage thereof. SOLUTION: An organic field-effect transistor type gas sensor 3 includes a field-effect transistor 1 with an organic semiconductor layer and a temperature control mechanism 24 for controlling temperature of the field-effect transistor 1. COPYRIGHT: (C)2013,JPO&INPIT

来源网站：

中国工程科技知识中心

来源网址：

http://www.ckcest.cn/home/