Transistors, methods of manufacturing a transistor and electronic devices including a transistor

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专利权人:

Samsung Electronics Co., Ltd.

发明人:

Kim Sun-il,Kim Sang-wook,Park Jae-chul,Kim Chang-jung

申请号：

US201012923241

公开号：

US9583638(B2)

申请日:

2010.09.10

申请国别(地区):

美国

年份:

2017

代理人:

Harness, Dickey & Pierce, P.L.C.

摘要：

A transistor, a method of manufacturing a transistor, and an electronic device including a transistor are provided, the transistor may include a channel layer having a multi-layer structure. The channel layer may have a double layer structure or a triple layer structure. At least two layers of the channel layer may have different oxygen concentrations.

来源网站：

中国工程科技知识中心

来源网址：

http://www.ckcest.cn/home/