Integrated circuit devices including fin shapes

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专利权人:

Samsung Electronics Co., Ltd.

发明人:

Chung Jae-yup

申请号：

US201514969778

公开号：

US9899393(B2)

申请日:

2015.12.15

申请国别(地区):

美国

年份:

2018

代理人:

Myers Bigel, P.A.

摘要：

Integrated circuit devices are provided. An integrated circuit device includes a substrate having first and second fin-shaped Field Effect Transistor (FinFET) bodies protruding from the substrate. The first and second FinFET bodies have different respective first and second shapes in a first region and a second region, respectively, of the integrated circuit device.

来源网站：

中国工程科技知识中心

来源网址：

http://www.ckcest.cn/home/