A semiconductor device includes a semiconductor substrate having a first surface, first and second field plate structures extending in a first direction parallel to the first surface, a plurality of gate electrode structures disposed over the first surface and extending in a second direction parallel to the first surface, the second direction being different than the first direction, and a plurality of source regions and drain regions of a first conductivity type arranged in an alternating manner at the first surface so that a drain region is disposed on one side of a gate electrode structure and a source region is disposed on the other side of the gate electrode structure. The gate electrode structures are disposed between the first and the second field plate structures. The source regions and the drain regions extend in parallel with one another along the second direction.
