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Magnetic field sensor having XMR elements in a full bridge circuit having diagonal elements sharing a same shape anisotropy
专利权人:
Infineon Technologies AG
发明人:
Raberg Wolfgang
申请号:
US201615206649
公开号:
US9612298(B2)
申请日:
2016.07.11
申请国别(地区):
美国
年份:
2017
代理人:
Eschweiler & Potashnik, LLC
摘要:
Embodiments of the present invention provide a magnetic field sensor. The magnetic field sensor includes at least four XMR elements connected in a full bridge circuit including parallel branches. The at least four XMR elements are GMR or TMR elements (GMR=giant magnetoresistance; TMR=tunnel magnetoresistance). Two diagonal XMR elements of the full bridge circuit include the same shape anisotropy, wherein XMR elements in the same branch of the full bridge circuit include different shape anisotropies.
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中国工程科技知识中心
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