Integrated circuit sensor device for charge detection hybridizing a lateral metal oxide semiconductor field effect transistor (MOSFET) and a vertical bipolar junction transistor (BJT)
Eklund Klas-Hakan,Zhang Shili,Smith Ulf,Norstrom Hans Erik
申请号：
US201414899428
公开号：
US10209215(B2)
申请日:
2014.06.17
申请国别(地区):
美国
年份:
2019
代理人:
Young & Thompson
摘要：
A semiconductor based integrated sensor device includes: a lateral insulating-gate field effect transistor (MOSFET) connected in series to the base of a vertical bipolar junction transistor (BJT) wherein the drain-drift-region of the MOSFET is part of the base-region of the BJT within the semiconductor substrate thus making electrical contact to the base of the BJT and the distance of the drain-drift-region of the MOSFET to the emitter of the BJT exceeds the vertical distance between the emitter and any buried layer, serving as collector, and the breakdown voltage of the device being determined by the BVCEO of the vertical BJT.
