MOJUMDER, Niladri Narayan,SONG, Stanley Seungchul,WANG, Zhongze,YEAP, Choh Fei
申请号：
EP20150732139
公开号：
EP3178114(A1)
申请日:
2015.06.12
申请国别(地区):
欧洲专利局
年份:
2017
代理人:
摘要：
A complementary metal oxide semiconductor (CMOS) static random access memory (SRAM) cell. A CMOS SRAM cell in accordance with an aspect of the present disclosure includes a bit line and a word line. Such a CMOS SRAM memory cell further includes a CMOS memory cell having at least a first p-channel device comprising a first channel material that differs from a substrate material of the CMOS memory cell, the first channel material having an intrinsic channel mobility greater than the intrinsic channel mobility of the substrate material, the first p-channel device coupling the CMOS memory cell to the bit line and the word line.
