Jung Chulmin,Ahmed Fahad,Yoon Sei Seung,Kim Keejong
申请号：
US201615010385
公开号：
US9627041(B1)
申请日:
2016.01.29
申请国别(地区):
美国
年份:
2017
代理人:
Arent Fox LLP
摘要：
A memory and a method to operate the memory are provided. The memory includes a plurality of memory cells and a wordline driver configured to output a wordline. The memory cells are coupled to the wordline. A control circuit is configured to supply an operating voltage to the memory cells and to the wordline driver. A voltage-adjustment circuit is configured to adjust the operating voltage supplied to the memory cells during the control circuit supplying the operating voltage to the memory cells and to the wordline driver. The method includes supplying an operating voltage to at least one memory cells and to a wordline coupled to the at least one memory cells and adjusting the operating voltage supplied to the at least one memory cells during the supplying the operating voltage to the at least one memory cells and to the wordline.
